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Wednesday, August 5, 2020 | History

2 edition of Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP found in the catalog.

Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP

Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP

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Published by NASA, For sale by the National Technical Information Service in [Washington, D.C.], Springfield, Va .
Written in English

    Subjects:
  • Dielectric films.,
  • Capacitance-voltage characteristics.,
  • Electron beams.,
  • Indium phosphides.,
  • Irradiation.,
  • Phosphorus.,
  • Plasmas (Physics),
  • Radiation damage.,
  • Vapor deposition.

  • Edition Notes

    StatementDragan M. Pantic ... [et al.] ; presented at the Dielectric Films on Compound Semiconductors Symposium sponsored by the Electrochemical Society, Honolulu, Hawaii, October 18-23, 1987.
    SeriesNASA technical memorandum -- 102544.
    ContributionsPantic, Dragan M., Electrochemical Society., United States. National Aeronautics and Space Administration., Symposium on Dielectric Films on Compound Semiconductors.
    The Physical Object
    FormatMicroform
    Pagination15 p.
    Number of Pages15
    ID Numbers
    Open LibraryOL16138058M

    the electron beam, thus enabling direct in-situ observation of the process. A schematic of the process is illustrated in Fig. 1a. In situ TEM micrographs of the electron-beam-induced deposition of gold on the reconstructed m-plane recorded after different time intervals of deposition are shown in Fig.1(b-d). It was observed that the deposition. @article{osti_, title = {Electron beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in-situ electron beam induced desorption}, author = {Olynick, D L and Cord, B and Schipotinin, A and Ogletree, D F and Schuck, P J}, abstractNote = {Hydrogen Silsesquioxane (HSQ) is used as a high-resolution resist with resolution down below 10nm half-pitch.

    Electron Beam and Sputter Deposition Choosing Process Parameters General Introduction The choice of process parameters for any process is determined not only by the physics and/or chemistry of the process, but by choices the manufacturer of the equipment has made and/or practical issues with measurements or simply ‘it’s a reasonable number’. observed during electron-beam damage in a silicate glass. It was discovered that electron-beam induced damage in this CaF 2– Al 2O 3–SiO 2 glass was dependent on the beam current density (dose rate). Damage could not be detected if the current density (dose .

    @article{osti_, title = {Ion-beam assisted, electron-beam physical vapor deposition}, author = {Singh, J}, abstractNote = {Electron beam-physical vapor deposition (EB-PVD) is a relatively new technology that has overcome some of the difficulties associated with chemical vapor deposition, physical vapor deposition, and thermal spray processes.   Electron beam induced current (EBIC) is a powerful technique which measures the charge collection efficiency of photovoltaics with sub-micron spatial resolution. The exciting electron beam results in a high generation rate density of electron-hole pairs, Cited by: 5.


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Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP Download PDF EPUB FB2

Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP (OCoLC) Material Type: Document, Government publication, National government publication, Internet resource: Document Type: Internet Resource, Computer File: All Authors / Contributors: Dragan M.

Electron beam induced damage in PECVD Si₃N₄ and SiO₂ films on InP (OCoLC) Material Type: Government publication, National government publication, Internet resource: Document Type: Book, Internet Resource: All Authors / Contributors: Dragan M Pantic; Electrochemical Society.; United States.

National Aeronautics and Space. (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric.

The electron-beam exposure was on the range of 10 -7 to 10 -3 C/cm Size: KB. Electron-beam-induced deposition (EBID) is a process of decomposing gaseous molecules by an electron beam leading to deposition of non-volatile fragments onto a nearby substrate. The electron beam is usually provided by a scanning electron microscope, which results in high spatial accuracy (potentially below one nanometer) and the possibility to produce free-standing, three-dimensional structures.

Electron-beam-induced current (EBIC) is a semiconductor analysis technique performed in a scanning electron microscope (SEM) or scanning transmission electron microscope (STEM).

It is used to identify buried junctions or defects in semiconductors, or to examine minority carrier properties. EBIC is similar to cathodoluminescence in that it depends on the creation of electron–hole pairs in the. Electron Beam Induced Current. Electron-beam-induced current (EBIC) is the current flow induced in an external circuit when the electron and holes generated by the action of the high-energy electron beam are separated by an electric field, e.g., a p–n junction or a Schottky barrier.

From: Encyclopedia of Materials: Science and Technology, The electron-beam induced damage in N-rich SiN x:H films, deposited on Si by plasma enhanced chemical vapour deposition, is studied using cross-section transmission electron is demonstrated that these films are unstable under electron beam irradiation, during conventional transmission electron microscopy observations ( keV), which causes strong outdiffusion of Si from Cited by: 1.

We have investigated the behaviour of self-supporting amorphous SiO 2 (a-SiO 2) thin films under keV electron-beam irradiation in a high-dose regime (10 9 Cm −2).Electron-energy-loss and energy-dispersive X-ray measurements show that oxygen is preferentially lost during the damage process which leaves the irradiated a-SiO 2 oxygen deficient.

The results are discussed in terms of Cited by: Electron-beam-induced chemical vapor deposition; Electron-beam-induced decomposition and growth This is a preview of subscription content, log in to check access.

References. Moreover, beam damage is also dependent on specimen thickness, specimen orientation, beam voltage, beam current density and beam size.

This article incorporates all of these damage phenomena and experimental dependences into a general description, interpreted by a unified mechanism of damage by induced electric by: Basic PECVD Plasma Processes (SiH • Surface interactions – deposit SiNx at on InP to avoid rough/lumpy films - or use NH3-free SiNx • Particles – if seen as silica dust in showerhead pattern on wafers then need to search for air leaks in gas lines or behind showerhead.

Or increaseFile Size: KB. We have investigated the behaviour of self-supporting amorphous SiO2 (a-SiO2) thin films under keV electron-beam irradiation in a high-dose regime ( Cm-2). Electron-energy-loss and energy-dispersive X-ray measurements show that oxygen is preferentially lost during the damage process which leaves the irradiated a-SiO2 oxygen by:   Damage caused by a beam-induced electric field was first introduced to interpret the formation and evolution of O 2 gas in the electron-irradiated bulk specimens of silicate glasses in scanning electron microscopy (SEM).

In this model, the incident electrons stop within the glass, setting up a layer of negative charge at a depth equal to the. Abstract. Radiation damage, i.e.

the introduction of structural (e.g. loss of crystallinity) or compositional (e.g. mass loss) changes by the electron beam, has been an inevitable and serious factor in limiting the amount of microstructural information that can be collected from an electron microscope by: A number of narrow channel devices were fabricated in high mobility modulation‐doped Si/SiGe two dimensional electron gas material and investigated at K using the electron beam irradiation to locally damage material into an insulting state.

Fluctuations were found in a number of devices with patterned widths below : Douglas J. Paul, Joseph M. Ryan, Michael Pepper, Alec N. Broers, Terry E. Whall, Juan M. Fernández. Background: Focused electron beam induced deposition (FEBID) is a direct-writing technique with nanometer resolution, which has received strongly increasing attention within the last decade.

In FEBID a precursor previously adsorbed on a substrate surface is dissociated in the focus of an electron beam. After 20 years of continuous development FEBID has reached a stage at which this technique Cited by:   Electron-beam-induced topographical, chemical, and structural patterning of amorphous titanium oxide films.

Kern P(1), Müller Y, Patscheider J, Michler J. Author information: (1)Empa, Materials Technology Laboratory, Feuerwerkerstra CH Thun, Switzerland. @d by: 1 Characterization of ion/electron beam induced deposition of electrical contacts at the sub-µm scale D.

Brunel1, D. Troadec1, D. Hourlier1, D. Deresmes1, M Zdrojek2 and T. Mélin1,a) 1Institut d'Electronique, de Microélectronique et de Nanotechnologie, CNRS UMRAvenue Poincaré, F. Scanning electron microscope (SEM) images of silver chloride particles at different stages under electron beam irradiation: (A) initial stage, (B) t = 10 min, (C) t = 20 min, (D) t = 60 min.

The silver chloride particles had smooth surface initially (a), the surface of specimen gradually sprouted plenty of nanoparticles as the time of electron beam irradiation was by: 6.

As said in the title, and in relation with the above unanswered article, I am also trying to model an electron beam induced current inside a silicon thin layer (1um).

With low energy (eV), the electrons hit the bulk, maybe creating e-/h+ pairs. title = "Electron-beam-induced surface reactions in Pd/PdO films", abstract = "Profile imaging observations of clean palladium surfaces suggested that surface diffusion occurred by the slip of surface Shockley partial dislocations resulting in the depletion of material from the by: 5.Abstract Electron-beam-induced damage was investigated in paints that are being developed as protective coatings for missiles.

The electron-beam testing of the paints had four objectives: (1) to determine, by establishing the damage threshold and mode, if low-level stress would cause pop-off, (2) to determine the impulse as a function of fluence, (3) to determine the mass loss as a function of.

title = "Beam-induced damage to thin specimens in an intense electron probe", abstract = "We have investigated the changes produced in single-element and two-layer transmission electron microscope (TEM) specimens irradiated by an intense nanometer-sized electron probe, such as that produced in a field-emission or aberration-corrected by: